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The 3-Band Hubbard-Model versus the 1-Band Model for the high-Tc Cuprates: Pairing Dynamics, Superconductivity and the Ground-State Phase Diagram

机译:高频Tc的3频段Hubbard模型与1频段模型   铜酸盐:配对动力学,超导性和基态阶段   图

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摘要

One central challenge in high-$T_c$ superconductivity (SC) is to derive adetailed understanding for the specific role of the $Cu$-$d_{x^2-y^2}$ and$O$-$p_{x,y}$ orbital degrees of freedom. In most theoretical studies aneffective one-band Hubbard (1BH) or t-J model has been used. Here, the physicsis that of doping into a Mott-insulator, whereas the actual high-$T_c$ cupratesare doped charge-transfer insulators. To shed light on the related question,where the material-dependent physics enters, we compare the competing magneticand superconducting phases in the ground state, the single- and two-particleexcitations and, in particular, the pairing interaction and its dynamics in thethree-band Hubbard (3BH) and 1BH-models. Using a cluster embedding scheme, i.e.the variational cluster approach (VCA), we find which frequencies are relevantfor pairing in the two models as a function of interaction strength and doping:in the 3BH-models the interaction in the low- to optimal-doping regime isdominated by retarded pairing due to low-energy spin fluctuations withsurprisingly little influence of inter-band (p-d charge) fluctuations. On theother hand, in the 1BH-model, in addition a part comes from "high-energy"excited states (Hubbard band), which may be identified with a non-retardedcontribution. We find these differences between a charge-transfer and a Mottinsulator to be renormalized away for the ground-state phase diagram of the3BH- and 1BH-models, which are in close overall agreement, i.e. are"universal". On the other hand, we expect the differences - and thus, thematerial dependence to show up in the "non-universal" finite-T phase diagram($T_c$-values).
机译:高T_c $超导性(SC)的一个主要挑战是要对$ Cu $-$ d_ {x ^ 2-y ^ 2} $和$ O $-$ p_ {x的特定作用产生详尽的理解, y} $轨道自由度。在大多数理论研究中,已经使用了有效的单波段Hubbard(1BH)或t-J模型。在这里,物理是掺杂到Mott绝缘体中,而实际的高T_c $铜酸盐是掺杂的电荷转移绝缘体。为了阐明相关的问题,即依赖于物质的物理学进入何处,我们比较了基态中竞争的磁相和超导相,单粒子和两粒子激发,尤其是三波段的配对相互作用及其动力学。哈伯(3BH)和1BH模型。使用聚类嵌入方案(即变分聚类方法(VCA)),我们发现两个模型中哪些频率与配对相关,并且是相互作用强度和掺杂的函数:在3BH模型中,从低掺杂到最佳掺杂的相互作用低能自旋波动会导致配对延迟,而带间(pd电荷)波动的影响却很小。另一方面,在1BH模型中,另外一部分来自“高能”激发态(哈伯德带),可以用非延迟贡献来识别。我们发现,对于3BH模型和1BH模型的基态相图,电荷转移和Mottinsulator之间的这些差异将被重新归一化,这在总体上是一致的,即是“通用的”。另一方面,我们期望差异,因此,材料依赖性将显示在“非通用”有限T相图中($ T_c $值)。

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